au.\*:("ALLEGRI P")
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HEMODYNAMIC EFFECTS CAUSED BY I.V. ADMINISTRATION OF VERAPAMIL IN HEALTHY SUBJECTSVINCENZI M; ALLEGRI P; GABALDO S et al.1976; ARZNEIMITTEL. FORSCH.; DTSCH.; DA. 1976; VOL. 26; NO 6; PP. 1221-1223; ABS. ALLEM.; BIBL. 17 REF.Article
ANEURISMA IDIOPATICO DEL VENTRICOLO DESTRO. DESCRIZIONE DI UN CASO = ANEVRYSME IDIOPATHIQUE DU VENTRICULE DROIT. DESCRIPTION D'UN CASVINCENZI M; ALLEGRI P; CETTO GL et al.1973; G. ITAL. CARDIOL.; ITAL.; DA. 1973; VOL. 3; NO 1; PP. 138-147; ABS. ANGL.; BIBL. 1P.1/2Serial Issue
Photoluminescence study of surface segregation of In in InGaAs-based structures grown by MBE and atomic layer MBEBOSACCHI, A; FRANCHI, S; PASCARELLA, P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 469-473, issn 0921-5107Conference Paper
InAs/GaAs self-assembled quantum dots grown by ALMBE and MBEBOSACCHI, A; FRIGERI, P; FRANCHI, S et al.Journal of crystal growth. 1997, Vol 175-76, pp 771-776, issn 0022-0248, 2Conference Paper
Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structuresMADELLA, M; BOSACCHI, A; FRANCHI, S et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 270-273, issn 0022-0248Conference Paper
Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterizationBARALDI, A; GHEZZI, C; MAGNANINI, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 174-178, issn 0921-5107Conference Paper
Fundus angiography with fluorescein-labelled peptide fraction from bovine factor VIII : correlation with histologic findingsCARDILLO PICCOLINO, F; GHIGLIONE, D; CEPPA, P et al.European journal of ophtalmology. 1992, Vol 2, Num 3, pp 135-143, issn 1120-6721Article
Effects of different processes with hydrogen on the photoluminescence of GaAlAs:Si grown by molecular beam epitaxyGRILLI, E; GUZZI, M; ZAMBONI, R et al.Applied physics letters. 1990, Vol 57, Num 26, pp 2797-2799, issn 0003-6951, 3 p.Article
Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxyBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 5, pp 1103-1105, issn 0734-211X, 3 p.Article
Vertically stacked quantum dots grown by ALMBE and MBEFRIGERI, P; BOSACCHI, A; FRANCHI, S et al.Journal of crystal growth. 1999, Vol 201202, pp 1136-1138, issn 0022-0248Conference Paper
Composition control of GaSbAs alloysBOSACCHI, A; FRANCHI, S; ALLEGRI, P et al.Journal of crystal growth. 1999, Vol 201202, pp 858-860, issn 0022-0248Conference Paper
Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxyBOSACCHI, A; COLONNA, F; FRANCHI, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 185-189, issn 0022-0248, 1Conference Paper
Microwave behaviour in Z type polycristalline hexaferritesALLEGRI, P; AUTISSIER, D; TAFFARY, T et al.Key engineering materials. 1997, pp 1424-1427, issn 1013-9826, isbn 0-87849-761-7, 3VolConference Paper